public class StdCellParams350 extends StdCellParams
StdCellParams.SelectFill, StdCellParams.SelectSrcDrn
EVEN, ODD
Modifier and Type | Method and Description |
---|---|
void |
addEssentialBounds(double loX,
double hiX,
Cell cell)
essential bounds for cells with both NMOS and PMOS
|
FoldsAndWidth |
calcFoldsAndWidth(double spaceAvailWid,
double totWid,
int groupSz)
Calculate the number of folds and the width of a MOS
transistor.
|
double |
getDRCRingSpacing() |
static StdCellParams |
invParams(Technology technology,
EditingPreferences ep) |
double |
roundGateWidth(double w)
round to nearest multiple of 1/2 lambda for MoCMOS,
nearest multiple of 0.2 for CMOS90
|
void |
wireVddGnd(FoldedMos[] moss,
StdCellParams.SelectSrcDrn select,
Cell p)
Wire pmos or nmos to vdd or gnd, respectively.
|
addEssentialBoundsFromChildren, addNmosWell, addNstackEssentialBounds, addPmosWell, addPstackEssentialBounds, addSelAroundDiff, addWellCon, addWellsForRow, checkMinStrength, doNCC, enableNCC, fillDiffAndSelectNotches, fillSelect, findPart, findPart, getCellBot, getCellTop, getDoubleStrapGate, getEditingPreferences, getEnableGateStrengthRatio, getExhaustivePlace, getFoldPitch, getGndExportName, getGndExportRole, getGndWidth, getGndY, getGridResolution, getM1TrackAboveVDD, getM1TrackBelowGnd, getM1TrackWidth, getM2TrackWidth, getNbPlacerPerms, getNmosWellHeight, getNmosWellTieName, getNmosWellTieRole, getNmosWellTieWidth, getNmosWellTieY, getPhysTrackY, getPmosWellHeight, getPmosWellTieName, getPmosWellTieRole, getPmosWellTieWidth, getPmosWellTieY, getRightDiffX, getRightDiffX, getRightDiffX, getSchemTrackAssign, getSeparateWellTies, getSimpleName, getSize, getTechType, getTrackPitch, getTrackY, getVddExportName, getVddExportRole, getVddWidth, getVddY, getWellOverhangDiff, getWellTiePitch, nbNmosTracks, nbPmosTracks, nccEnabled, newPart, newPart, parameterizedName, quantizeSize, roundSize, roundToGrid, setDoubleStrapGate, setExhaustivePlace, setGndExportName, setGndExportRole, setGndWidth, setGndY, setM1TrackWidth, setM2TrackWidth, setMaxMosWidth, setNbPlacerPerms, setNmosTrackOffset, setNmosWellHeight, setPmosTrackOffset, setPmosWellHeight, setSeparateWellTies, setSimpleName, setSizeQuantizationError, setTrackWidth, setVddExportName, setVddExportRole, setVddWidth, setVddY, sizedName, validateTrackAssign, wireVddGnd
public static StdCellParams invParams(Technology technology, EditingPreferences ep)
public FoldsAndWidth calcFoldsAndWidth(double spaceAvailWid, double totWid, int groupSz)
If it is possible, allocate an even number of fingers so that the left most and right most diffusion contacts may be connected to power or ground to reducing the capacitance of the inner switching diffusion contacts.
calcFoldsAndWidth
in class StdCellParams
spaceAvailWid
- the height in the standard cell that is
available for the diffusion of the MOS transistor.totWid
- the total electrical width required.groupSz
- This method creates fingers in multiples of
groupSz. For example, if groupSz is 2, then only even numbers of
fingers are created. This is needed when one FoldedMos is
actually going to be wired up as 2 identical, independent
transistors, for example the 2 PMOS pullups for a 2-input NAND
gate.public void wireVddGnd(FoldedMos[] moss, StdCellParams.SelectSrcDrn select, Cell p)
wireVddGnd
in class StdCellParams
public void addEssentialBounds(double loX, double hiX, Cell cell)
addEssentialBounds
in class StdCellParams
public double roundGateWidth(double w)
StdCellParams
roundGateWidth
in class StdCellParams
public double getDRCRingSpacing()
getDRCRingSpacing
in class StdCellParams